NTJD4001N ON Semiconductor, NTJD4001N Datasheet - Page 2

• Manufacturer Part Number: NTJD4001N
• Description: Small Signal MOSFET
• Manufacturer: ON Semiconductor

2. Pulse Test: pulse width
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
300 s, duty cycle
(Note 2)
V
(T
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
J
Q
td
(BR)DSS
td
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
V
= 25 C unless otherwise stated)
g
DSS
GSS
G(TH)
t
(OFF)
OSS
RSS
(ON)
RR
tr
FS
ISS
tf
SD
GS
GD
(
2%.
/T
/T
)
J
J
V
http://onsemi.com
V
V
I
I
GS
V
S
V
V
V
V
V
V
GS
V
GS
NTJD4001N
I
I
V
GS
D
= 10 mA
GS
GS
GS
DS
GS
DS
GS
= 0 V, dI
GS
= 10 mA, R
10 mA
= 0 V,
= 4.5 V, V
Test Condition
= 5.0 V, V
= 0 V, V
= V
= 4.0 V, I
= 2.5 V, I
= 3.0 V, I
= 0 V, f = 1.0 MHz,
10 mA R
= 0 V, I
= 0 V, V
V
V
I
I
I
S
DS
D
DS
2
= 10 mA
= 0.1 A
S
= 5.0 V
, I
0 1 A
/dt = 8.0 A/ s,
D
GS
D
5 0 V
DS
D
DD
D
D
DS
= 100 A
G
= 100 A
= 10 mA
= 10 mA
= 10 mA
= 10 V
T
= 30 V
= 50
= 5.0 V,
= 24 V,
T
J
50
J
= 125 C
= 25 C
Min
0.8
30
−3.2
7.25
0.65
0.45
12.4
Typ
1.2
1.0
1.5
0.9
0.2
0.3
0.2
56
80
20
19
17
23
94
82
Max
1.0
1.5
1.5
2.5
1.3
0.7
33
32
12
1.0
mV/ C
mV/ C
Unit
mS
nC
pF
ns
ns
V
V
V
A
A