NDH8304 Fairchild, NDH8304 Datasheet
NDH8304
Manufacturer Part Number
NDH8304
Description
Dual P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild
Datasheet
1.NDH8304.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDH8304P
Manufacturer:
SIEMENS
Quantity:
830
Part Number:
NDH8304P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
___________________________________________________________________________________________
Absolute Maximum Ratings
© 1997 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
General Description
DSS
GSS
D
J
NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
SuperSOT
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TM
-8 P-Channel enhancement mode power field
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Features
-2.7 A, -20 V. R
Proprietary SuperSOT
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
6
7
8
5
R
DS(ON)
NDH8304P
DS(ON)
-55 to 150
-2.7
156
-20
-10
0.8
±8
40
= 0.07
= 0.095
TM
-8 package design using copper
@ V
@ V
GS
GS
1
2
3
4
= -4.5 V
= -2.7 V.
DS(ON)
NDH8304P Rev.C
May 1997
.
Units
°C/W
°C/W
°C
W
V
V
A
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