VN10K-TO18 Seme LAB, VN10K-TO18 Datasheet - Page 2

• Manufacturer Part Number: VN10K-TO18
• Description: N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: Seme LAB

ELECTRICAL RATINGS
NOTES:
THERMAL CHARACTERISTICS
Semelab plc.
R
V
BV
I
GS(TH)
D(ON)
DS(ON)
R
I
I
C
C
C
GSS
DSS
g
g
t
t
on
off
q
oss
rss
DSS
os
iss
fs
JA
1) Pulse Test: Pulse Width = 300
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Characteristic
Characteristic
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Current
Zero Gate Voltage Drain Current
On State Drain Current
Static Drain – Source
On-State Resistance
Forward Transconductance
Common Source Output Conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on Time
Turn-off Time
Thermal Resistance Junction – Ambient when mounted on PCB
Telephone [phone]. Fax [phone].
E-mail:
[e-mail]
1
1
(T
amb
1
m
= 25°C unless otherwise stated)
s , Duty Cycle
Website:
V
V
V
V
V
V
V
V
V
V
V
f = 1MHz
V
I
V
D
GS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GEN
= 0.6A
£
http://www.semelab.co.uk
2%
= 0V
= V
= 0V
= 48V
= 10V
= 5V
= 10V
= 10V
= 7.5V
= 0V
= 25V
= 15V
= 10V
Test Conditions
GS
I
I
V
V
T
V
I
I
T
I
I
R
R
D
D
D
D
D
D
J
J
GS
GS
GS
L
G
= 100
= 1mA
= 0.2A
= 0.5A
= 0.5A
= 50mA
= 125°C
= 125°C
= 23
= 25
= 15V
= 0V
= 10V
W
W
m
A
Min.
Min.
750
100
0.8
60
VN10K-TO18
1000
Typ.
Typ.
120
300
200
1.4
0.7
5.6
38
16
1
3
4
3
2
7
9
Max. Unit
Max. Unit
100
500
400
Prelim.10/99
2.5
7.5
10
60
25
10
10
5
9
5
°C/W
mA
mS
nA
m
m
pF
ns
W
V
A
S