MTP6N60 ST Microelectronics, MTP6N60 Datasheet - Page 2

• Manufacturer Part Number: MTP6N60
• Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

MTP6N60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/9
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
( BR)DSS
I
thj-cas e
thj- amb
thj- amb
I
I
C
E
E
DS( on)
C
C
G S(th)
D( on)
fs
I
I
G SS
DS S
T
A R
A R
oss
AR
AS
iss
rss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating x 0.8 T
> I
= 10 V
> I
=
= 10V
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
I
j
D
D
f = 1 MHz
max,
V
o
= 1 mA
= 3 A
D S(on) max
D S(on) max
C unless otherwise specified)
G S
= 0
< 1%)
V
c
G S
I
= 125
D
= 3 A
= 0
Max
Max
Typ
o
C
Min.
Min.
Min.
600
6.8
2
2
Max Value
1150
Typ.
Typ.
Typ.
62.5
160
300
460
3.1
4.8
0.5
6.8
4.2
21
75
1
1
Max.
Max.
Max.
1500
250
240
110
4.5
1.2
25
100
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
nA
pF
pF
pF
mJ
mJ
o
V
V
A
S
A
A
C
A
A