FQB10N60C Fairchild Semiconductor, FQB10N60C Datasheet - Page 4

• Manufacturer Part Number: FQB10N60C
• Description: 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
Operation in This Area
is Limited by R
V
vs Temperature
J
, Junction Temperature [
DS
10
0
1 0
1 0
, Drain-Source Voltage [V]
1 0
1
- 1
- 2
0
1 0
- 5
DS(on)
※ Notes :
D = 0 .5
0 . 0 1
1. T
2. T
3. Single Pulse
0 . 0 5
0 . 0 2
0 . 2
0 . 1
50
C
J
= 25
= 150
DC
o
C
Figure 11. Transient Thermal Response Curve
o
C
100 ms
(Continued)
1 0
100
10 ms
10
o
2
- 4
C]
1 ms
s in g le p u ls e
※ Notes :
1. V
2. I
t
1
D
G S
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
= 250 μ A
100 s
= 0 V
150
1 0
10 s
- 3
200
10
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
Figure 10. Maximum Drain Current
1 0
Figure 8. On-Resistance Variation
※ N o te s :
P
- 1
1 . Z
2 . D u t y F a c to r, D = t
3 . T
DM
-50
θ J C
J M
50
- T
( t) = 0 . 8 ℃ / W M a x .
vs Case Temperature
C
= P
t
1
T
t
T
J
vs Temperature
2
, Junction Temperature [
1 0
D M
C
0
, Case Temperature [ ℃ ]
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 4.75 A
= 10 V
Rev. A, October 2003
150
200