FDP047AN08 Fairchild Semiconductor, FDP047AN08 Datasheet

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FDP047AN08

Manufacturer Part Number
FDP047AN08
Description
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.7m
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
FDP047AN08A0
N-Channel UltraFET
75V, 80A, 4.7m
Features
• r
• Q
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
MOSFET Maximum Ratings
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
V
V
I
E
P
T
R
R
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 92nC (Typ.), V
STG
(FLANGE)
DRAIN
= 4.0m (Typ.), V
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
GS
GS
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
C
C
= 10V
< 144
= 25
= 10V, I
o
FDP SERIES
®
TO-220AB
C
Trench MOSFET
o
C, V
o
C, V
D
= 80A
GS
GS
= 10V, with R
Parameter
= 10V)
T
C
GATE
= 25°C unless otherwise noted
DRAIN
SOURCE
certification.
JA
= 62
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
o
C/W)
G
D
S
-55 to 175
Ratings
Figure 4
0.48
600
310
2.0
75
80
15
62
20
April 2002
FDP047AN08A0 Rev. A
Units
W/
o
o
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

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FDP047AN08 Summary of contents

Page 1

... Primary Switch for 24V and 48V systems SOURCE DRAIN GATE T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ certification. April 2002 Ratings Units Figure 4 A 600 mJ 310 -55 to 175 C o 0.48 C C/W FDP047AN08A0 Rev. A ...

Page 2

... 250 100 0.0040 0.0047 - 0.0058 0.0087 - 0.0082 0.011 - 6600 - - 1000 - - 240 - 92 138 - 40V DD = 80A - 1.0mA - 160 - 128 - - 1. 1 FDP047AN08A0 Rev. A Units ...

Page 3

... C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP047AN08A0 Rev. A 175 ...

Page 4

... TIME IN AVALANCHE (ms) AV Capability V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.5 1 DRAIN TO SOURCE VOLTAGE ( 10V 80A 120 160 JUNCTION TEMPERATURE ( C) J FDP047AN08A0 Rev 100 o C 1.5 200 ...

Page 5

... C ISS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 40V WAVEFORMS IN DESCENDING ORDER 80A 10A GATE CHARGE (nC) g Gate Currents FDP047AN08A0 Rev. A 200 100 ...

Page 6

... Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP047AN08A0 Rev 10V 90% ...

Page 7

... PSPICE Electrical Model .SUBCKT FDP047AN08A0 1.5e 1.5e-9 CIN 6 8 6.4e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 82.3 EDS EGS ESG EVTHRES EVTEMP GATE LDRAIN 2 5 1e-9 LGATE ...

Page 8

... CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 ISCL DBREAK 50 11 DBODY 16 MWEAK EBREAK MMED + 17 18 LSOURCE - SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDP047AN08A0 Rev ...

Page 9

... CTHERM6 2 tl 1e-1 RTHERM1 th 6 3.24e-3 RTHERM2 6 5 8.08e-3 RTHERM3 5 4 2.28e-2 RTHERM4 4 3 1e-1 RTHERM5 3 2 1.1e-1 RTHERM6 2 tl 1.4e-1 SABER Thermal Model SABER thermal model FDP047AN08A0T template thermal_model th tl thermal_c th ctherm.ctherm1 6.45e-3 ctherm.ctherm2 3e-2 ctherm.ctherm3 1.4e-2 ctherm.ctherm4 1.65e-2 ctherm.ctherm5 4.85e-2 ctherm ...

Page 10

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 ® SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ ® ® UltraFET VCX™ Definition FDP047AN08A0 Rev. H5 ...

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