PSMN005-25D Philips, PSMN005-25D Datasheet - Page 4

• Manufacturer Part Number: PSMN005-25D
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: Philips

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
100
1000
100
ID% = 100 I
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0
10
0
I
Fig.2. Normalised continuous drain current.
1
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
D
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
50
50
); I
D.C.
DM
= f(T
single pulse; parameter t
75
75
D
mb
/P
10
); conditions: V
D 25 ˚C
100
100
= f(T
125
125
mb
1 ms
10 ms
tp = 10 us
100 us
100 ms
mb
= 25 ˚C
)
150
150
GS
5 V
100
p
175
175
transistor
4
0.001
50
45
40
35
30
25
20
15
10
0.025
0.015
0.005
Fig.5. Typical output characteristics, T
0.01
5
0
0.03
0.02
0.01
Fig.6. Typical on-state resistance, T
0.1
10
0
1
1E-06
0
Drain Current, ID (A)
5 V
0
Drain-Source On Resistance, RDS(on) (Ohms)
10V
Transient thermal impedance, Zth j-mb (K/W)
0.02
0.1
0.2
Fig.4. Transient thermal impedance.
D = 0.5
single pulse
0.2
0.05
2.2 V
5
Z
1E-05
th j-mb
0.4
3 V
10
Drain-Source Voltage, VDS (V)
= f(t); parameter D = t
0.6
15
1E-04
Drain Current, ID (A)
R
2.4 V
VGS = 2.8 V
Pulse width, tp (s)
I
0.8
DS(ON)
D
20
= f(V
1E-03
1
25
= f(I
DS
1.2
)
30
D
)
1E-02
PSMN005-25D
2.6 V
Product specification
P
D
1.4
35
tp
p
40
T
1.6
1E-01
/T
VGS = 10V
j
Tj = 25 C
D = tp/T
j
= 25 ˚C .
Tj = 25 C
= 25 ˚C .
2.8 V
45
1.8
Rev 1.100
2.6 V
5 V
2.2 V
2.4 V
2 V
3 V
1E+00
50
2