PH1214-300M Tyco Electronics, PH1214-300M Datasheet

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PH1214-300M

Manufacturer Part Number
PH1214-300M
Description
Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
Manufacturer
Tyco Electronics
Datasheet

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Part Number:
PH1214-300M
Manufacturer:
M/A-COM
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PH1214-300M
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PH1214-300M
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Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
Features
Absolute Maximum Ratings @ 25 °C
Electrical Characteristics @ 25 °C
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +45 °C
Storage Temperature
Junction Temperature
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Parameter
Parameter
Symbol
V
V
P
T
CES
EBO
I
TOT
STG
T
C
VSWR-T
VSWR-S
j
Symbol
R
BV
I
TH(JC)
P
G
RL
CES
η
CES
O
P
-65 to +200
Rating
21.0
620
3.0
200
90
Min.
8.75
300
90
50
10
-
-
-
-
Max.
Units
1.5:1
.25
2:1
10
°C
°C
W
-
-
-
-
-
V
V
A
Units
°C/W
mA
dB
dB
W
%
V
-
-
Outline Drawing
I
V
V
V
V
V
V
V
V
C
CE
CC
CC
CC
CC
CC
CC
CC
=80 mA
=40 V
=40 V, P
=40 V, P
=40 V, P
=40 V, P
=40 V, P
=40 V, P
=40 V, P
in
in
in
in
in
in
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Test Conditions
Rev. 0
12/06/01

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PH1214-300M Summary of contents

Page 1

Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic ...

Page 2

... Pout at 1dB overdrive and Pout at Pin = 40W. Power Output Curves 500 400 300 200 100 ∆Gain Gain Eff. Droop RL Ic (A) (dB) (dB) (%) (dB) (dB) 10.06 63.2 16.1 0.1 18 9.48 59.3 15 0.04 15 0.82 9.24 58.4 14.4 0.06 16 PH1214-300M Pout vs. Pin Pin (W) Ω.) P1dB Overdrive ∆ Po Pout Gain Droop Eff. (W) (dB) (dB) (%) (dB) 451 0.46 9.52 0.38 59.8 412 0.65 9.12 0.32 58.2 378 0.51 8.75 0.35 40 ...

Page 3

... Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty Test Fixture Impedances Test Fixture Circuit Dimensions PH1214-300M 12/06/01 Rev ...

Page 4

... Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty Test Fixture Assembly Specifications subject to change without notice. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. PH1214-300M 12/06/01 Rev ...

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