STW60N10 ST Microelectronics, STW60N10 Datasheet - Page 2

• Manufacturer Part Number: STW60N10
• Description: N-CHANNEL MOSFET
• Manufacturer: ST Microelectronics

STH60N10/FI STW60N10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/11
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
( BR)DSS
I
thj-cas e
t hc- sin k
C
thj- amb
I
I
C
E
E
G S(th)
DS( on)
D( on)
fs
C
I
I
DS S
G SS
T
A R
A R
oss
AR
AS
iss
rss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
D S
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
max,
max,
Parameter
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V I
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10 V I
> I
> I
case
D D
D( on)
D( on)
GS
< 1%)
< 1%)
= 25 V)
20 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
j
D
D
f = 1 MHz
max,
D
V
= 250 A
o
= 30 A
D S(on) max
D S(on) max
C unless otherwise specified)
= 30 A
G S
= 0
< 1%)
Max
Max
Typ
T
c
V
c
= 100
G S
I
= 125
D
= 30 A
= 0
TO-218/TO-247 ISOWATT218
o
C
o
C
0.75
Min.
Min.
Min.
100
60
25
2
300
Max Value
0.1
30
4000
1100
Typ.
Typ.
Typ.
0.02
250
720
180
2.9
35
60
37
1.79
0.025
Max.
Max.
Max.
1000
5000
1400
0.05
250
350
100
4
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
nA
mJ
mJ
pF
pF
pF
o
V
V
A
S
A
A
A
A
C