NTD4960N ON Semiconductor, NTD4960N Datasheet

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NTD4960N

Manufacturer Part Number
NTD4960N
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet

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NTD4960N
Advance Information
Power MOSFET
30 V, 55 A, Single N−Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. P1
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Compliant
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CPU Power Delivery
DC−DC Converters
Recommended for High Side (Control)
qJA
qJA
qJC
= 13 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
J
, L = 1.0 mH, R
= 25°C, V
to Minimize Conduction Losses
Parameter
DD
t
Steady
p
State
=10ms
= 50 V, V
(T
G
J
= 25 W)
= 25°C unless otherwise stated)
GS
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 10 V,
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
STG
T
DSS
ID
DM
I
I
I
GS
D
D
S
J
D
D
D
L
,
−55 to
Value
35.71
+175
11.1
1.68
1.07
29.7
84.5
±20
137
260
8.0
8.9
6.4
30
55
40
45
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
CASE 369AA
1
1 2
(Bent Lead)
V
STYLE 2
Drain
Drain 3
(BR)DSS
30 V
DPAK
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
4960N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
N−CHANNEL MOSFET
http://onsemi.com
Gate
12.7 mW @ 4.5 V
(Straight Lead)
8.0 mW @ 10 V
R
CASE 369AC
1
= Year
= Work Week
= Pb−Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
3
4
MAX
Source
S
Gate
(Straight Lead
CASE 369D
1
1
NTD4960N/D
Drain
DPAK)
Drain
2
I
IPAK
D
4
55 A
3
2
MAX
3
Source
4

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NTD4960N Summary of contents

Page 1

... Gate Drain Source Gate Source 1 2 Gate Drain Y = Year WW = Work Week 4960N = Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: NTD4960N/D MAX 4 3 Source ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on FR4 board using the minimum ...

Page 3

... Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4960NT4G NTD4960N−1G www.DataSheet4U.com NTD4960N−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise specified) J ...

Page 4

V 10V DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.040 0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 0.004 ...

Page 5

C iss 1500 1000 C oss 500 C rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 11 100 t d(off) ...

Page 6

... T M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM ...

Page 7

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4960N/D MAX 6.22 6.73 2.38 0.88 0.58 1.09 1.01 0.58 3.60 5.46 1.27 0.25 ...

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