NTD4965N ON Semiconductor, NTD4965N Datasheet - Page 4

• Manufacturer Part Number: NTD4965N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

15
14
13
12
10
90
80
70
60
50
40
30
20
10
11
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
9
8
7
6
5
4
3
2
0
0
3
−50
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
= 30 A
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
4
= 10 V
10 V thru 4.5 V
DS
V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
5
T
25
J
= 25°C
2
Temperature
6
Voltage
50
7
75
3
TYPICAL PERFORMANCE CURVES
100
8
V
125
I
T
4
D
GS
J
= 30 A
= 25°C
9
= 3.7 V
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3.5 V
3.3 V
3.1 V
2.9 V
150
2.7 V
10
5
175
4
10000
1000
100
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
10
90
80
70
60
50
40
30
20
10
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
DS
20
= 10 V
T
V
V
Figure 2. Transfer Characteristics
J
DS
10
GS
= 125°C
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
30
T
2
J
I
= 25°C
D
, DRAIN CURRENT (A)
40
Gate Voltage
15
vs. Voltage
V
V
T
T
T
GS
J
J
GS
J
= 125°C
= 150°C
T
= 85°C
50
= 4.5 V
= 10 V
J
3
= −55°C
20
60
70
4
T
25
V
J
GS
= 25°C
80
= 0 V
90
30
5