NTD4969N ON Semiconductor, NTD4969N Datasheet - Page 4

• Manufacturer Part Number: NTD4969N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

0.019
0.018
0.017
0.016
0.015
0.013
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.014
0.012
70
60
50
40
30
20
10
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
−50
3.0
I
V
D
Figure 3. On−Resistance vs. Gate−to−Source
GS
= 30 A
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
= 10 V
DS
4.0
V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
0
10 V thru 4.5 V
, JUNCTION TEMPERATURE (°C)
5.0
25
2
Temperature
T
J
6.0
50
= 25°C
Voltage
75
7.0
3
TYPICAL PERFORMANCE CURVES
100
8.0
V
125
4
GS
I
T
D
= 4.2 V
J
9.0
http://onsemi.com
= 30 A
3.8 V
3.4 V
2.6 V
= 25°C
3.0 V
150
5
175
10.0
4
10000
1000
100
20
19
18
17
16
15
14
13
12
11
10
70
60
50
40
30
20
10
10
9
8
7
6
5
4
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
DS
= 10 V
V
V
20
Figure 2. Transfer Characteristics
T
DS
GS
10
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 125°C
, GATE−TO−SOURCE VOLTAGE (V)
2
T
I
D
J
V
, DRAIN CURRENT (A)
= 25°C
30
GS
Gate Voltage
15
vs. Voltage
= 4.5 V
T
V
T
T
J
J
GS
J
= 125°C
= 150°C
= 85°C
T
= 10 V
40
3
J
= −55°C
20
T
J
50
= 25°C
4
25
V
GS
60
= 0 V
30
70
5