ATP212 Sanyo Semicon Device, ATP212 Datasheet - Page 2

• Manufacturer Part Number: ATP212
• Description: N-Channel Silicon MOSFET
• Manufacturer: Sanyo Semicon Device

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Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
1
0.8
2.3
V IN
6.5
4
Parameter
2
2.3
V IN
3
50Ω
G
0.6
V DD =30V
D
0.55
S
I D =18A
R L =1.67Ω
0.4
ATP212
1.5
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
0.4
V DS =10V, I D =1mA
V DS =10V, I D =18A
I D =18A, V GS =10V
I D =9A, V GS =4.5V
I D =5A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =30V, V GS =10V, I D =35A
V DS =30V, V GS =10V, I D =35A
V DS =30V, V GS =10V, I D =35A
I S =35A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
4.6
2.6
ATP212
0.4
Conditions
min
1.2
Ratings
typ
1820
34.5
0.96
150
100
110
125
6.5
6.8
35
17
23
25
16
87
max
2.6
1.2
23
33
37
No. A1507-2/4
Unit
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
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