FQD2N60 Fairchild Semiconductor, FQD2N60 Datasheet - Page 3

• Manufacturer Part Number: FQD2N60
• Description: 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
500
400
300
200
100
10
10
10
12
10
0
-1
-2
10
0
8
6
4
2
0
10
0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
2
I
10
10
D
, Drain Current [A]
0
0
C
C
C
oss
iss
rss
3
V
GS
V
= 20V
GS
= 10V
4
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
10
10
1. 250  s Pulse Test
2. T

Note : T
gs
gd
ds
1
1
C
+ C
+ C
= 25 

Notes :
gd
gd
1. V
2. f = 1 MHz
(C
5
ds
GS
J
= shorted)
= 25 
= 0 V
6
10
10
10
10
-1
12
10
0
-1
0
8
6
4
2
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
150

2
25

4
V
0.6
V
150

Q
GS
SD
and Temperature
V
V
G
DS
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
V
, Total Gate Charge [nC]
DS
25

DS
= 480V
= 300V
= 120V
4
0.8
6
-55

1.0
6

Notes :

Notes :
1.2
1. V
2. 250  s Pulse Test
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
= 50V
= 0V
8
D
1.4
= 2.4A
Rev. A, April 2000
1.6
10
10