FQD4N20L Fairchild Semiconductor, FQD4N20L Datasheet - Page 3

• Manufacturer Part Number: FQD4N20L
• Description: 200V LOGIC N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
450
400
350
300
250
200
150
100
10
10
10
50
8
6
4
2
0
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
iss
oss
rss
4
V
GS
= 10V
V
GS
= 5 V
C
C
C
iss
oss
rss
※ Note : T
※ Notes :
= C
= C
= C
10
10
1. 250 μ s Pulse Test
2. T
6
gs
ds
gd
1
1
C
+ C
+ C
= 25 ℃
※ Notes :
gd
1. V
2. f = 1 MHz
J
gd
= 25 ℃
(C
GS
ds
= shorted)
= 0 V
8
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0
0.2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25℃
0.4
1
Variation vs. Source Current
150℃
150℃
2
0.6
2
V
V
V
DS
V
Q
GS
SD
and Temperature
DS
= 160V
G
V
25℃
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
= 100V
DS
0.8
3
-55℃
= 40V
4
1.0
4
6
1.2
5
※ Notes :
※ Notes :
1. V
2. 250 μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
6
DS
GS
= 25V
= 0V
8
D
1.6
= 3.8 A
7
Rev. A2, December 2000
1.8
10
8