BUZ101L Siemens Semiconductor Group, BUZ101L Datasheet - Page 7

• Manufacturer Part Number: BUZ101L
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
Typ. drain-source on-resistance
R
parameter: V
R
C
DS (on)
DS (on)
10
10
10
10
0.19
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
pF
4
3
2
1
0
DS
0
=
V
V
V
GS
GS
GS
2.0
2.5
3.0
)
a
a
a
I
5
[V] =
[V] =
[V] =
D
GS
GS
3.5
b
10
)
a
= 0V, f = 1MHz
10
4.0
c
b
4.5
d
20
15
5.0
e
c
20
5.5
f
30
6.0
g
d
25
7.0
40
h
30
8.0
e
i
10.0
j
A
I
D
V
V
C
f
C
C
DS
oss
rss
iss
g
i
40
j
7
h
60
Forward characteristics of reverse diode
I
parameter: T
Gate threshold voltage
V
parameter: V
V
F
I
F
GS(th)
GS (th)
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
0.0
SD
3
2
1
0
V
-60
= ( T
)
0.4
j
, t
j
GS
)
-20
p
= V
= 80 µs
0.8
DS
20
1.2
, I
T
T
T
T
j
j
j
j
D
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
98%
typ
2%
= 1 mA
60
1.6
2.0
100
BUZ 101L
2.4
07/96
°C
V
T
SD
j
V
3.0
180