BUZ103 Siemens Semiconductor Group, BUZ103 Datasheet
BUZ103
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BUZ103 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type V DS BUZ 103 50 V Maximum Ratings ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage -40 ° Gate threshold voltage DS, D Zero gate voltage drain ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot C 130 W 110 P tot 100 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µ 120W tot 0.0 1.0 2.0 3.0 Typ. transfer characteristics ...
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Drain-source on-resistance (on) j parameter 0.11 0. (on) 0.08 0.07 0.06 98% 0.05 typ 0.04 0.03 0.02 0.01 0.00 -60 -20 20 ...
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Avalanche energy parameter µH GS 110 ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 103 07/96 ...