BUZ342 Siemens Semiconductor Group, BUZ342 Datasheet - Page 6

• Manufacturer Part Number: BUZ342
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
=
140
120
110
100
2 x I
V
90
80
70
60
50
40
30
20
10
60
50
45
40
35
30
25
20
15
10
A
A
0
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
)
P
D
tot
1
p
x R
= 400W
p
= 80 µs
l
k
= 80 µs
j
2
i
DS(on)max
h
g
3
4
5
6
D
= f ( V
7
c
a
e
f
d
b
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
GS
V
V
DS
)
V
V
GS
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: V
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.032
0.024
0.020
0.016
0.012
0.008
0.004
0.000
2 x I
60
50
45
40
35
30
25
20
15
10
S
5
0
0
0
=
V
V
V
D
GS
GS
GS
4.0
4.5
5.0
a
a
a
I
[V] =
[V] =
[V] =
x R
D
GS
p
20
5.5
b
10
)
= 80 µs,
DS(on)max
6.0
c
a
40
6.5
d
20
7.0
e
60
b
7.5
30
f
8.0
g
80
9.0
40
h
c
10.0
fs
i
100
BUZ 342
07/96
= f
20.0
j
A
I
D
I
( I
A
D
d
D
g
e
)
i
j
130
h
60
f