PHT6N03T Philips Semiconductors, PHT6N03T Datasheet

no-image

PHT6N03T

Manufacturer Part Number
PHT6N03T
Description
TrenchMOS transistor Standard level FET
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology, the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
converters and general purpose
switching applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
November 1997
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
th j-sp
th j-amb
1
2
3
4
GS
, T
j
gate
drain
source
drain (tab)
for
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
use
transistor
in
DC-DC
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
T
T
T
T
-
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
1
sp
amb
sp
amb
sp
amb
sp
amb
GS
PARAMETER
Drain-source voltage
Drain current (DC) T
Drain current (DC) T
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 10 V
sp
amb
= 25 ˚C
= 25 ˚C
SYMBOL
TYP.
MIN.
- 55
12
-
-
-
-
-
-
-
-
-
-
-
-
g
Product specification
MAX.
MAX.
12.8
51.2
23.6
MAX.
150
5.9
4.1
8.3
1.8
30
30
16
15
70
12.8
150
9
5.9
8.3
30
30
PHT6N03T
d
s
Rev 1.200
UNIT
UNIT
K/W
K/W
UNIT
W
W
˚C
m
V
V
V
A
A
A
A
A
A
˚C
W
V
A
A

Related parts for PHT6N03T

PHT6N03T Summary of contents

Page 1

... T = 100 ˚C amb ˚ ˚C amb ˚ ˚C amb - CONDITIONS Mounted on any PCB Mounted on PCB of Fig.19 1 Product specification PHT6N03T MAX. UNIT ˚C 12 ˚C 5.9 amb 8.3 W 150 ˚ SYMBOL MIN. MAX. ...

Page 2

... GS G Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 2 Product specification PHT6N03T MIN. MAX. UNIT - 2 kV MIN. TYP. MAX. UNIT 30 ...

Page 3

... 5.9 A; -dI /dt = 100 - CONDITIONS ˚ Product specification PHT6N03T MIN. TYP. MAX. UNIT - - 6 24 0. 115 - MIN. TYP. MAX. UNIT - - 60 mJ Rev 1 ...

Page 4

... V GS RDS(ON) / mOhm 7830- 100 100 100 1000 ˚C Fig.6. Typical on-state resistance Product specification PHT6N03T Zth j-amb / (K/W) BUKX83 D = 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E-01 1E+ Fig.4. Transient thermal impedance f(t); parameter j-mb ...

Page 5

... f 10000 1000 100 100 150 0.1 Fig.12. Typical capacitances f Product specification PHT6N03T BUK759-60 max. typ. min. - 100 150 Fig.10. Gate threshold voltage. = f(T ); conditions mA Sub-Threshold Conduction 2% typ 98 ...

Page 6

... Fig.15. Normalised avalanche energy rating DSS 7830-30 VGS 0 1.5 2 Fig.16. Avalanche energy test circuit. W DSS j VGS 0 Fig.17. Switching test circuit. 6 Product specification PHT6N03T 100 120 140 Tmb / f(T ); conditions 5 VDD + L VDS - -ID/100 T.U. RGS shunt 2 ...

Page 7

... Philips Semiconductors TrenchMOS transistor Standard level FET MOUNTING INSTRUCTIONS Fig.18. soldering pattern for surface mounting SOT223. November 1997 3.8 min 1.5 min 2.3 6.3 1.5 min (3x) 1.5 min 4.6 7 Product specification PHT6N03T Dimensions in mm. Rev 1.200 ...

Page 8

... Philips Semiconductors TrenchMOS transistor Standard level FET PRINTED CIRCUIT BOARD Fig.19. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). November 1997 Product specification PHT6N03T Dimensions in mm. 18 4.5 Rev 1.200 ...

Page 9

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". November 1997 6.7 6.3 3.1 0.32 0.24 2.9 0.10 0. max 1.05 2.3 1.8 max 0.85 4.6 Fig.20. SOT223 surface mounting package. 9 Product specification PHT6N03T B 0 7.3 3.7 6.7 3 0.80 0 0.60 (4x) Rev 1.200 M A ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1997 10 Product specification PHT6N03T Rev 1.200 ...

Related keywords