RT1N130x Isahaya Electronics Corporation, RT1N130x Datasheet - Page 2

• Manufacturer Part Number: RT1N130x
• Description: Transistor
• Manufacturer: Isahaya Electronics Corporation

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MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
SYMBOL
Ｖ
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
Ｖ
Ｖ
Ｖ
Ｔｓｔｇ
ＣＥ（ｓａｔ）
Ｉ
ｈ
Ｒ
Ｉ
Ｐ
Ｔｊ
ＣＢＯ
ｆ
ＣＢＯ
ＥＢＯ
ＣＥＯ
ＣＭ
ＦＥ
Ｔ
Ｃ
Ｃ
１
1000
0.1
10
100
1
10
0.1
Collector to Base voltage
Emitter to Base voltage
Peak Collector current
Junction temperature
Storage temperature
C to E break down voltage
C to E saturation voltage
Input resistance
Gain band width product
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Collector cut off current
DC forward current gain
1
DC forward current gain-Collector current
VCE=5V
VCE=200mV
Input on voltage-Collector current
PARAMETER
PARAMETER
Collector current IC[mA]
Collector current IC[mA]
1
ISAHAYA ELECTRONICS CORPORATION
10
10
ＲＴ１Ｎ１３０Ｘ SERIES
I
V
V
I
V
RT1N130U
-55～+150
100
100
CB
CE
CE
C
C
=100μA，R
=5V，I
=10mA，I
=6V，I
=50V，I
+150
150
1000
100
10
C
E
0
E
=-10mA
=1mA
=0
B
BE
VCE=5V
TEST CONDITION
=0.5mA
RT1N130M
Collector current-Input off voltage
=∞
0.5
Input off voltage VI(OFF)[V]
RATING
100
200
200
50
50
6
1
-55～+150
RT1N130C
+150
1.5
RT1N130S
2
450
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
100
0.7
50
LIMIT
UNIT
TYP
200
mA
mA
1.0
℃
V
V
V
℃
mW
〈Transistor〉
MAX
1.3
0.1
0.3
UNIT
MHz
μA
kΩ
－
V
V