RT1N141x Isahaya Electronics Corporation, RT1N141x Datasheet - Page 2

• Manufacturer Part Number: RT1N141x
• Description: Transistor
• Manufacturer: Isahaya Electronics Corporation

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MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
SYMBOL
Ｖ
Ｒ
Ｖ
Ｖ
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
Ｖ
Ｖ
Ｖ
Ｔｓｔｇ
２
ＣＥ（ｓａｔ）
TYPICAL CHARACTERISTICS
Ｉ
ｈ
Ｉ（ＯＦＦ）
Ｒ
Ｉ
Ｐ
Ｉ（ＯＮ）
／Ｒ
Ｔｊ
ＣＢＯ
ｆ
ＣＢＯ
ＥＢＯ
ＣＥＯ
ＣＭ
ＦＥ
Ｔ
Ｃ
Ｃ
１
１
1000
100
10
0.1
10
Emitter to Base voltage
Junction temperature
Storage temperature
DC forward current gain
C to E saturation voltage
Input off voltage
Resistance ratio
Gain band width product
Collector to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
C to E break down voltage
Collector cut off current
Input on voltage
Input resistance
1
0.0
Collector Current - Input Off Voltage
1
Input On Voltage - Collector Current
Input Off Voltage Ｖ Ｉ （ Ｏ Ｆ Ｆ ） （ Ｖ ）
PARAMETER
Collector Current Ｉ Ｃ （ ｍＡ ）
PARAMETER
0.4
ISAHAYA ELECTRONICS CORPORATION
0.8
10
1.2
ＲＴ１Ｎ１４１Ｘ SERIES
RT1N141T
I
V
V
I
V
V
V
125（※）
1.6
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
CB
CE
CE
CE
CE
C
C
=100μA，R
=5V，I
=10mA，I
=0.2V，I
=5V，I
=6V，I
=50V，I
-55～+125
100
2.0
+125
C
C
E
E
=-10mA
=10mA
C
=100μA
=0
B
=5mA
RT1N141U
BE
TEST CONDITION
=0.5mA
=∞
125
1000
DC Forward Current Gain - Collector Current
100
10
RT1N141M
1
RATING
100
200
50
10
50
Collector Current Ｉ Ｃ （ ｍＡ ）
150
RT1N141C
-55～+150
+150
10
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
0.8
7.0
0.9
50
50
RT1N141S
LIMIT
TYP
200
0.1
1.5
1.1
1.0
10
450
100
〈Transistor〉
MAX
1.1
0.1
0.3
3.0
13
UNIT
mW
mA
mA
℃
℃
V
V
V
UNIT
MHz
μA
kΩ
－
V
V
V
V