RT1N144x Isahaya Electronics Corporation, RT1N144x Datasheet - Page 2

• Manufacturer Part Number: RT1N144x
• Description: Transistor
• Manufacturer: Isahaya Electronics Corporation

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MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
SYMBOL
Ｖ
Ｒ
Ｖ
Ｖ
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
Ｖ
Ｖ
Ｖ
Ｔｓｔｇ
２
ＣＥ（ｓａｔ）
Ｉ
ｈ
Ｉ（ＯＦＦ）
Ｒ
Ｉ
Ｐ
Ｉ（ＯＮ）
／Ｒ
Ｔｊ
ＣＢＯ
ｆ
ＣＢＯ
ＥＢＯ
ＣＥＯ
ＣＭ
ＦＥ
Ｔ
1000
Ｃ
Ｃ
１
100
10
１
0.0
0.1
10
1
Collector to Base voltage
Emitter to Base voltage
Peak Collector current
Junction temperature
Storage temperature
C to E break down voltage
C to E saturation voltage
Input on voltage
Input resistance
Resistance ratio
Gain band width product
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Collector cut off current
DC forward current gain
Input off voltage
VCE=5V
1
collector current-Input off voltage
Input on voltage-collector current
VCE=0.2V
0.4
Input off voltage ＶＩ（ＯＦＦ）（Ｖ）
PARAMETER
PARAMETER
collector current ＩＣ（ｍＡ）
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
ＲＴ１Ｎ１４４Ｘ SERIES
I
V
V
I
V
V
V
RT1N144T
-55～+125
1.6
CB
CE
CE
CE
CE
C
C
125（※）
=100μA，R
=5V，I
=10mA，I
=0.2V，I
=5V，I
=6V，I
=50V，I
+125
100
C
C
E
2.0
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
E
=-10mA
=5mA
C
=100μA
=0
B
=5mA
BE
TEST CONDITION
=0.5mA
RT1N144U
=∞
150
1000
100
DC forward current Gain -collector current
10
1
RT1N144M
RATING
VCE=5V
100
200
50
50
6
-55～+150
collector current ＩＣ（ｍＡ）
200
+150
RT1N144C
10
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
0.4
7.0
4.2
50
50
LIMIT
RT1N144S
TYP
200
0.1
1.0
0.7
4.7
10
450
〈Transistor〉
MAX
100
5.1
0.1
0.3
1.8
13
UNIT
mA
mA
℃
℃
V
V
V
mW
UNIT
MHz
μA
kΩ
－
V
V
V
V