MT16LSDF3264LHY-10E Micron, MT16LSDF3264LHY-10E Datasheet - Page 18

• Manufacturer Part Number: MT16LSDF3264LHY-10E
• Description: DRAM Module, 256MB, 512MB (x64, DR) 144Pin SDRAM SODIMM
• Manufacturer: Micron

Table 17: EEPROM Operating Modes
Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. D 9/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA OUT
SDA IN
SCL
t SU:STA
Figure 9: SPD EEPROM Timing Diagram
t F
RW# BIT
t HD:STA
1
0
1
1
0
0
t LOW
t AA
V
V
V
V
b7
IH
IH
IH
IH
t HIGH
1
0
DEVICE TYPE IDENTIFIER
WC
t HD:DAT
V
V
or V
or V
or V
or V
IL
IL
18
IL
IL
IL
IL
b6
0
1
BYTES
t DH
≤ 16
≥ 1
1
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
START, Device Select, RW = 1
START, Device Select, RW = 0, Address
reSTART, Device Select, RW = 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW# = 0
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
b4
0
0
SA2
SA2
INITIAL SEQUENCE
b3
CHIP ENABLE
©2004 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0