MT16LSDT3264AY-10E Micron, MT16LSDT3264AY-10E Datasheet - Page 11

• Manufacturer Part Number: MT16LSDT3264AY-10E
• Description: DRAM Module, 128MB (x64, SR), 256MB (x64, DR) 168Pin SDRAM UDIMM
• Manufacturer: Micron

because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both read and write bursts; when M9 = 1,
the programmed burst length applies to read bursts,
but write accesses are single-location (nonburst)
accesses.
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. D 9/04 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
11
128MB (x64, SR), 256MB (x64, DR)
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
CAS Latency Table
CAS LATENCY = 2
CLOCK FREQUENCY (MHZ)
ALLOWABLE OPERATING
133
100
100
©2003, 2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
143
133
125