MT18LD1672AG-5X Micron, MT18LD1672AG-5X Datasheet - Page 9

• Manufacturer Part Number: MT18LD1672AG-5X
• Description: 16 MEG x 72 NONBUFFERED DRAM DIMM
• Manufacturer: Micron

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on Inputs or I/O Pins
Operating Temperature, T
Storage Temperature (plastic) ............ -55ºC to +125ºC
Power Dissipation ................................................... 9W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1) (V
8, 16, 32 Meg x 72 Nonbuffered DRAM DIMMs
DM79.p65 – Rev. 2/99
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT:
DQ is disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Relative to V
DD
DD
SS
= +3.3V ±0.3V)
Pin Relative to V
V
....................................... -1V to +4.6V
IN
V
V
OUT
DD
OUT
OUT
A
+ 0.3V
= 2mA)
(ambient) ... 0ºC to +70ºC
= -2mA)
V
DD
+ 0.3V CB0-CB7
SS
......... -1V to +4.6V
CAS0#-CAS7#
A0-A11
WE0#, WE2#,
OE0#, OE2#
RAS0#-RAS3#
DQ0-DQ63,
9
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
SYMBOL
V
V
V
V
V
I
I
I
I
I
OZ
DD
OH
I
I
I
I
OL
IH
NONBUFFERED DRAM DIMMs
IL
1
2
3
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MB
256MB
128MB
256MB
128MB
256MB
128MB
256MB
128MB
256MB
64MB
64MB
64MB
64MB
64MB
SIZE
ALL
ALL
ALL
ALL
ALL
MIN
-0.5
-18
-36
-72
-10
-18
-36
-10
-18
-18
-10
-12
2.4
0.4
8, 16, 32 MEG x 72
-4
-6
-5
-5
3
2
V
DD
MAX
3.6
0.8
12
18
36
72
10
18
36
10
18
18
10
4
6
5
5
–
–
+ 0.3
©1999, Micron Technology, Inc.
UNITS NOTES
µA
µA
µA
µA
µA
V
V
V
V
V
31
31