MT18LSDT6472AG-13E Micron, MT18LSDT6472AG-13E Datasheet - Page 11

• Manufacturer Part Number: MT18LSDT6472AG-13E
• Description: 512MB SDRAM UDIMM
• Manufacturer: Micron

because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when M9
= 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
11
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CAS LATENCY = 2
168-PIN SDRAM UDIMM
CAS Latency Table
CLOCK FREQUENCY (MHz)
ALLOWABLE OPERATING
133
100
100
CAS LATENCY = 3
©2004 Micron Technology, Inc.
N/A
143
133