MT18VDDF12872HY-40B Micron, MT18VDDF12872HY-40B Datasheet - Page 15

• Manufacturer Part Number: MT18VDDF12872HY-40B
• Description: 1GB DDR SDRAM SODIMM
• Manufacturer: Micron

Table 14: DDR SDRAM Component Electrical Characteristics and
Notes: 1–5, 12–15, 28; notes appear on pages 16–18; 0°C
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Recommended AC Operating Conditions (Continued)
DD
T
A
15
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
+70°C; V
t
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RCD
RRD
REFI
VTD
t
WR
na
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
= V
1GB (x72, ECC, DR) PC3200
MIN
0.25
200
0.9
0.4
0.4
15
15
10
15
75
0
2
0
DD
t
QH -
Q = +2.6V ±0.1V
-40B
200-PIN DDR SODIMM
t
DQSQ
MAX
70.3
1.1
0.6
7.8
0.6
UNITS
t
t
t
t
t
t
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
ns
ns
CK
©2004 Micron Technology, Inc.
NOTES
17, 19
37
37
17
22
21
21