HMPSA43 Hi-Sincerity Mocroelectronics, HMPSA43 Datasheet

HMPSA43

Manufacturer Part Number

HMPSA43

Description

NPN SILICON TRANSISTOR

Manufacturer

Hi-Sincerity Mocroelectronics

Datasheet

1.HMPSA43.pdf (3 pages)

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Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HMPSA43

Manufacturer:

ROHM

Quantity:

200

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HMPSA43

NPN SILICON TRANSISTOR

Description

The HMPSA43 is high voltage transistor.

Features

Absolute Maximum Ratings

Characteristics

Classification Of hFE2 & V

*VCE(sat)

Storage Temperature ............................................................................................ -55 ~ +150 C

Junction Temperature ................................................................................... +150 C Maximum

Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW

VCBO Collector to Base Voltage ...................................................................................... 200 V

VCEO Collector to Emitter Voltage ................................................................................... 200 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ...................................................................................................... 500 mA

*VBE(sat)

High Collector-Emitter Breakdown Voltage

Low Collector-Emitter Saturation Voltage

For Complementary Use with PNP Type HMPSA93

Maximum Temperatures

Maximum Power Dissipation

Maximum Voltages and Currents (Ta=25 C)

BVCBO

BVCEO

BVEBO

Symbol

*hFE1

*hFE2

*hFE3

ICBO

IEBO

Cob

Rank

Min.

200

HI-SINCERITY

MICROELECTRONICS CORP.

(Ta=25 C)

hFE1

Typ.

CE(sat)

Max.

100

350

900

hFE2

120

MHz

Unit

*Pulse Test : Pulse Width 380us, Duty Cycle 2%

IC=100uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=200V, IE=0

VEB=6V, IC=0

IC=20mA, IB=2mA

IC=1mA, VCE=10V

IC=10mA, VCE=10V

IC=30mA, VCE=10V

IC=10mA, VCE=20V, f=100MHZ

VCB=20V, f=1MHz

hFE3

120

Test Conditions

Spec. No. : HE6334-B

Issued Date : 1992.11.18

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

VCE(sat)

200mV

350mV

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HMPSA43 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA93 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 100 V =10V 0 Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 10 Cob 1 0 Reverse Biased voltage (V) Safe Operating ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...

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