NE56787 ASI, NE56787 Datasheet
NE56787
Manufacturer Part Number
NE56787
Description
NPN SILICON HI FREQUNCY TRANSISTOR
Manufacturer
ASI
Datasheet
1.NE56787.pdf
(1 pages)
www.DataSheet4U.com
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
CHARACTERISTICS
DESCRIPTION:
The
general purpose and ultra linear small
signal amplifier applications up to 4.0
GHz.
FEATURES INCLUDE:
MAXIMUM RATINGS:
V
P
V
V
Ideal for linear Class-A amplifiers
T
SYMBOL
T
DISS
I
CBO
CEO
EBO
STG
JC
C
J
I
I
C
h
ASI NE56787
CBO
EBO
f
FE
OB
s
NPN SILICON HI FREQUNCY TRANSISTOR
600 mW @ T
-65 °C to +200 °C
-65 °C to +200 °C
V
V
V
V
S
CB
EB
CE
CB
21
= 1.0 V
= 10 V
= 10 V
= 10 V
40 °C/W
60 mA
2
2.0 V
25 V
12 V
is Designed for
= 0 dB
T
A
C
= 25 °C
TEST CONDITIONS
75 °C
I
C
= 30 mA
Specifications are subject to change without notice.
f = 1.0 MHz
PACKAGE STYLE .100 2L
MINIMUM TYPICAL MAXIMUM
7.5
30
0.44
100
8.0
0.80
200
1.0
1.0
NE56787
UNITS
REV. A
GHz
µA
pF
---
1/1
A
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