BLF2022-30 Philips Semiconductors, BLF2022-30 Datasheet - Page 6
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BLF2022-30
Manufacturer Part Number
BLF2022-30
Description
UHF power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLF2022-30.pdf
(12 pages)
www.DataSheet4U.com
Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Fig.8
DS
( )
input
50
z i
= 28 V; I
12
8
4
0
2
Input impedance as a function of frequency
(series components); typical values.
D
V gate
= 240 mA; P
2.05
L2
R1
C8
L
= 30 W; T
C3
C4
2.1
C7
h
C1
25 C.
L6
C6
2.15
L3
C5
x i
r i
f (GHz)
C2
MLD942
L4 L5
Fig.10 Class-AB test circuit.
2.2
6
L7
handbook, halfpage
L8
V
Fig.9
L11
L12
DS
( )
Z L
= 28 V; I
8
4
0
4
8
C9
2
Load impedance as a function of frequency
(series components); typical values.
L9
D
= 240 mA; P
C10
C13
C16
2.05
C11
C12
C17
C18
L
= 30 W; T
L10
2.1
C14
C15
L1
h
25 C.
R L
X L
BLF2022-30
Product specification
output
2.15
C19
50
f (GHz)
MLD944
C20
MLD943
V DD
2.2