BLF2048 Philips Semiconductors, BLF2048 Datasheet - Page 3
BLF2048
Manufacturer Part Number
BLF2048
Description
UHF push-pull power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLF2048.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
CHARACTERISTICS
T
Note
1. Capacitance of die only.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2000 Feb 17
R
R
V
V
I
I
I
g
R
C
2-tone, class-AB
j
DSS
DSX
GSS
MODE OF OPERATION
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C; per section unless otherwise specified.
DSon
rs
UHF push-pull power LDMOS transistor
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
DS
PARAMETER
= 26 V; f = 2200 MHz, P
f
1
= 2200; f
PARAMETER
(MHz)
f
2
= 2200.1
L
= 120 W (CW).
V
V
V
V
V
V
V
V
note 1
GS
DS
GS
GS
GS
DS
GS
GS
V
(V)
26
28
DS
h
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 25 C; R
3
GSth
GSth
CONDITIONS
D
DS
DS
= 1.4 mA
2 x 400
2 x 400
+ 9 V; V
+ 9 V; I
D
D
(mA)
= 26 V
= 26 V; f = 1 MHz;
I
DQ
= 140 mA
= 5 A
DS
P
th j-h
L
= 0
= 120 W; T
D
DS
= 0.5 K/W; unless otherwise specified.
= 5 A
120 (PEP)
140 (PEP)
= 10 V
CONDITIONS
(W)
P
L
mb
= 50 C, note 1
65
1.5
18
MIN.
typ. 11.2
(dB)
>10
G
p
4
0.17
3.4
Preliminary specification
TYP.
typ. 31
>30
(%)
VALUE
BLF2048
D
3.5
10
250
MAX.
0.35
0.15
typ. 25
(dBc)
V
V
A
nA
S
pF
d
UNIT
UNIT
K/W
K/W
A
im
26