BLF547 Philips Semiconductors, BLF547 Datasheet - Page 3

• Manufacturer Part Number: BLF547
• Description: UHF push-pull power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
October 1992
handbook, halfpage
V
I
P
T
T
R
R
D
V
stg
i
SYMBOL
DS
tot
th j-mb
th mb-h
UHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
GS
SYMBOL
(A)
10
I D
10
mb
1
2
1
= 25 C;
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
10
PARAMETER
PARAMETER
(2)
V DS (V)
DS(on)
.
MRA996
10
2
T
total device; both sections equally
loaded
total device; both sections equally
loaded
3
mb
up to T
both sections equally loaded
handbook, halfpage
= 25 C; P
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
P tot
(W)
mb
250
200
150
100
CONDITIONS
CONDITIONS
50
Fig.3 Power/temperature derating curves.
0
= 25 C; total device;
0
tot
= 225 W
20
40
(2)
(1)
60
MIN.
65
80
Product specification
max. 0.78 K/W
max. 0.15 K/W
RESISTANCE
100
THERMAL
T h (
65
20
9
225
150
200
MAX.
o
BLF547
MRB027
C)
120
V
V
A
W
C
C
UNIT