CGH27060F Cree, CGH27060F Datasheet

CGH27060F

Manufacturer Part Number

CGH27060F

Description

GaN HEMT

Manufacturer

Cree

Datasheet

1.CGH27060F.pdf (8 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CGH27060F

Manufacturer:

CREE

Quantity:

112

Company:

Meier Automation Equipment Co., Limited

Part Number:

CGH27060F

Manufacturer:

CREE/科锐

Quantity:

20 000

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CGH27060F

60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically for high efficiency, high gain and wide bandwidth

capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and

BWA amplifier applications. The transistor is supplied in a ceramic/metal

flange package.

Typical Performance Over 2.3-2.6GHz

Note:

Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,

64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.

Features

Parameter

Small Signal Gain

EVM @ 39 dBm

Drain Efficiency @ 39 dBm

Input Return Loss

•

2.3 - 2.9 GHz Operation

>13 dB Small Signal Gain

2.0 % EVM at 8 W P

23 % Efficiency at 8 W P

2.7˚C/W Typical thermal resistance under 8.0 W P

WiMAX Fixed Access 802.16-2004 OFDM

WiMAX Mobile Access 802.16e OFDMA

OUT

PRELIMINARY

2.3 GHz

13.5

24.2

2.1

9.8

OUT

Subject to change without notice.

www.cree.com/wireless

2.4 GHz

13.3

23.8

16.0

1.9

= 25˚C)

of Demonstration Amplifier

2.5 GHz

AVE

13.0

22.5

1.9

7.7

OFDM

2.6 GHz

12.9

22.3

2.2

5.9

Units

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