3SK166 Sony Corporation, 3SK166 Datasheet - Page 2

• Manufacturer Part Number: 3SK166
• Description: GaAs N-channel Dual Gate MES FET
• Manufacturer: Sony Corporation

Typical Characteristics (Ta = 25°C)
Electrical Characteristics
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
Product name classification
I
100
DSS
80
60
40
20
0
0
classification
(V
3SK166A-0
3SK166A-2
G2S
V
= 1.5V)
DS
Item
2
– Drain to source voltage [V]
I
D
vs. V
4
DS
20 to 80mA
45 to 80mA
I
DSS
6
I
I
I
I
V
V
gm
Ciss
Crss
NF
Ga
DSX
G1SS
G2SS
DSS
RANK
Symbol
G1S
G2S
(OFF)
(OFF)
8
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
–1.2V
–1.4V
–1.6V
V
= 0V
G1S
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
V
f = 1kHz
V
I
V
f = 1MHz
V
I
V
f = 800MHz
D
D
D
D
D
DS
G1S
G2S
G1S
G2S
DS
G2S
G1S
DS
DS
G1S
G2S
DS
G2S
DS
G1S
DS
G2S
DS
G2S
DS
G2S
= 100µA
= 100µA
= 10mA
= 10mA
= 10mA
– 2 –
= 8V
= 0V
= 0V
= 5V
= 5V
= 5V
= 5V
= 5V
= 5V
= –4V
= 0V
= –5V
= 0V
= –5V
= 0V
= 0V
= 0V
= 0V
= 0V
= 1.5V
= 1.5V
= 1.5V
Condition
100
80
70
60
40
20
–2.0
(V
DS
V
= 5V)
G1S
–1.5
– Gate 1 to source voltage [V]
Min.
20
–1
–1
25
18
I
D
vs. V
–1.0
Typ.
1.3
1.2
40
25
20
G1S
–0.5
Max.
100
–20
–20
2.0
2.5
80
–4
–4
40
(Ta = 25°C)
3SK166A
0
Unit
mA
ms
µA
µA
µA
dB
dB
pF
fF
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.5V
V
V
G2S