3SK194 Hitachi Semiconductor, 3SK194 Datasheet - Page 5

• Manufacturer Part Number: 3SK194
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

20
16
12
30
24
18
12
8
4
0
6
0
–1
Gate 1 to Source Voltage V
Forward Transfer Admittance vs.
Power Gain vs. Drain Current
4
Gate 1 to Source Voltage
0
Drain Current I
8
1
12
2
D
3
2.5
2
1.5
1
0.5
(mA)
V
V
f = 900 MHz
DS
G2S
V
f = 1 kHz
G1S
16
DS
= 6 V
3
= 3 V
= 6 V
(V)
20
4
50
40
30
20
10
50
40
30
20
10
0
0
Power Gain vs. Drain to Source Voltage
Drain to Source Voltage V
Power Gain vs. Drain Current
4
4
Drain Current I
8
8
12
12
D
(mA)
V
V
f = 200 MHz
V
I
f = 200 MHz
D
DS
G2S
G2S
= 10 mA
DS
16
16
= 6 V
= 3 V
= 3 V
(V)
3SK194
20
20
5