3SK297 Hitachi Semiconductor, 3SK297 Datasheet - Page 6

• Manufacturer Part Number: 3SK297
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK297
6
2.0
1.6
1.2
0.8
0.4
10
8
6
4
2
0
0
Noise Figure vs. Drain to Source Voltage
1
Drain to source voltage
Noise Figure vs. Drain Current
2
Drain current
2
4
5
6
I
V
V
f = 900 MHz
D
V
I
f = 200 MHz
G2S
G2S
D
DS
= 10 mA
(mA)
V
10
= 6 V
DS
= 3 V
= 3 V
8
(V)
10
20
20
16
12
20
16
12
8
4
0
8
4
0
1
Power Gain vs. Drain to Source Voltage
Drain to source voltage
Power Gain vs. Drain Current
2
Drain current
2
4
5
6
I
V
V
f = 900 MHz
V
I
f = 900 MHz
D
G2S
DS
G2S
D
(mA)
= 10 mA
V
10
= 6 V
DS
= 3 V
= 3 V
8
(V)
10
20