3SK318 Hitachi Semiconductor, 3SK318 Datasheet - Page 2

• Manufacturer Part Number: 3SK318
• Description: Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
• Manufacturer: Hitachi Semiconductor

3SK318
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
2
Symbol Min
V
V
V
I
|y
C
C
C
PG
NF
G1SS
G2SS
DS(op)
(BR)DSS
(BR)G1SS
(BR)G2SS
G1S(off)
G2S(off)
iss
oss
rss
fs
|
Symbol
V
V
V
I
Pch
Tch
Tstg
D
6
—
—
0.5
0.5
0.5
18
1.3
0.9
—
18
—
DS
G1S
G2S
6
6
Typ
—
—
—
—
—
0.7
0.7
4
24
1.6
1.2
0.019
21
1.4
Max
—
—
—
1.0
1.0
10
32
1.9
1.5
0.03
—
2.2
100
100
Ratings
6
20
100
150
–55 to +150
6
6
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test Conditions
I
I
I
V
V
V
I
V
I
V
V
V
I
V
I
V
I
D
G1
G2
D
D
D
D
D
G1S
G2S
DS
DS
DS
G2S
DS
DS
DS
= 200 A, V
= 100 A
= 100 A
= 10mA , f = 1kHz
= 10mA , f= 1MHz
= 10mA , f = 900MHz
= 10 A, V
= 10 A, V
= 5V, V
= 5V, V
= 3.5V, V
= 3.5V, V
= 3.5V, V
= 3.5V, V
= 5V, V
= 5V, V
= 3V
Unit
V
V
V
mA
mW
C
C
G2S
G1S
G2S
G1S
G1S
G2S
G2S
G2S
G1S
G2S
G1S
= 3V
= 3V
= V
= V
= 1.1V
= 3V
= 3V
= 3V
= V
= V
= V
DS
DS
G2S
DS
DS
= 0
= 0
= 0
= 0
= 0