NE696M01 CEL, NE696M01 Datasheet

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NE696M01

Manufacturer Part Number
NE696M01
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
CEL
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE696M01-T1-A
Manufacturer:
NEC
Quantity:
20 000
www.DataSheet4U.com
FEATURES
• HIGH f
• LOW NOISE FIGURE:
• HIGH GAIN:
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT
DESCRIPTION
ELECTRICAL CHARACTERISTICS
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
SYMBOLS
|S
14 GHz TYP at 3 V, 10 mA
NF = 1.6 dB TYP at 2 GHz
|S
PERFORMANCE
Cre
I
I
h
CBO
EBO
NF
21E
FE 1
21E
f
T
2
|
2
|
2
T
= 14 dB TYP at 2 GHz
:
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
CE
PART NUMBER
= 3 V, I
CE
= 3 V, I
CE
CE
EB
CB
C
CB
= 3 V, I
FREQUENCY TRANSISTOR
= 3 mA, f = 2 GHz
= 1 V, I
= 3 V, I
= 3 V, I
C
= 5 V, I
NEC's NPN SILICON HIGH
= 10 mA, f = 2 GHz
C
C
C
= 10 mA, f = 2 GHz
E
E
= 0
= 10 mA
= 0, f = 1 MHz
(T
= 0
A
= 25°C)
UNITS
GHz
µA
µA
pF
dB
dB
OUTLINE DIMENSIONS
PIN OUT
1. Emitter
2. Emitter
3. Base
Note:
Pin 3 is identified with a circle on the bottom of the package.
2.0 ± 0.2
0.9 ± 0.1
4. Emitter
5. Emitter
6. Collector
California Eastern Laboratories
MIN
1.3
80
0.7
0.65
PACKAGE OUTLINE M01
2
3
1
SIDE VIEW
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
NE696M01
0 ~ 0.1
M01
TYP
0.15
120
1.6
14
14
(Units in mm)
NE696M01
6
5
4
0.15
0.2 (All Leads)
+0.10
- 0.05
MAX
160
0.1
0.1

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NE696M01 Summary of contents

Page 1

... Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel. NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS PIN OUT 1 ...

Page 2

... TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 Ambient Temperature, T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1.0 2.0 Collector to Emitter Voltage NE696M01 (T = 25°C) A TYPICAL NOISE PARAMETERS UNITS RATINGS V 9 FREQ. (GHz 1.0 1 ...

Page 3

... TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30.0m IC 2.00m /div 0.00 0.00 VCE (V) Collector to Emitter Voltage, V TYPICAL SCATTERING PARAMETERS NE696M01 FREQUENCY S 11 (GHz) MAG ANG 0.40 0.728 -52.30 0.50 0.684 -64.20 0.60 0.639 -73.80 0.70 0.594 -83.40 0.80 0.556 -92.50 0.90 0.522 -100.70 1.00 0.492 -108.50 1.20 0.442 -123.40 1.40 0.406 -137.30 1.60 0.380 -150 ...

Page 4

... TYPICAL SCATTERING PARAMETERS 1 0.8 1.5 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.4 -0.6 -1.5 -0.8 -1 NE696M01 FREQUENCY S 11 GHz MAG ANG 0.40 0.941 -25.2 0.80 0.874 -49.7 1.00 0.833 -61.1 2.00 0.610 -119.1 2.50 0.536 -150.6 3.00 0.502 176.8 4.00 0.550 123.5 5.00 0.617 93.4 6.00 0.660 74 0.40 0.753 -46.2 0.80 0.583 -83.4 1.00 0.513 -98.3 2.00 0.338 -165.4 2.50 0.333 161.7 3 ...

Page 5

... NE696M01 MAG ANG 0.885 -25.1 0.299 0.739 -41.1 0.506 0.687 -46.5 0.627 0.573 -67.5 1.159 0.562 -76.6 1.352 0.570 -85.9 1.422 0.606 -104.5 1.312 0.642 -129.8 1.053 0.695 -164.2 ...

Page 6

... NE696M01 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 7e-16 MJC BF 119 XCJC NF 1.06 CJS VAF 20.5 VJS IKF 0.18 MJS ISE 1e- 6.5 XTF NR 1.08 VTF VAR 18 ITF IKR 0.015 PTF ISC 1.23 XTB RB 11 XTI RBM 2.5 KF IRB 0.009 CJE ...

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