SLD-1026Z Sirenza Microdevices, SLD-1026Z Datasheet - Page 2

• Manufacturer Part Number: SLD-1026Z
• Description: 3 Watt Discrete LDMOS Device Plastic Surface Mount Package
• Manufacturer: Sirenza Microdevices

Pin Diagram
Pin Description
Quality Specifications
303 S. Technology Court
Broomfield, CO 80021
DC Specifications
Note 1:
Gate voltage must be applied to V
should never be applied to the transistor unless it is properly terminated on both input and output.
Note 2:
The required V
transistors.
Note 3:
The threshold voltage (V
application notes AN-067 LDMOS Bias Temperature Compensation.
Pin #
1
GND
2
3
1, 3
4, 6
2
5
V
V
V
DS
GS
GS
ESD Rating
Parameter
ESD
Protection
Symbol
Breakdown
Source, Gnd
R
Quiescent
Threshold
GS
C
C
GND
C
GND
Function
g
DSon
oss
rss
iss
m
Drain
Gate
corresponding to a specific I
NC
NC
GSTH
) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza
5
4
These pins are not connected internal to the package. Bus them to pin 2 as shown in the app circuit.
Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to maintain constant
bias current over the operating temperature range. Care must be taken to protect against video transients that exceed
the maximum input power or voltage.
These pins are not connected internal to the package. Bus them to pin 5 as shown in the app circuit.
Transistor RF output and drain bias voltage. Typical voltage 28V.
These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for
hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern.
6
GS
Parameter
Forward Transconductance @ 30mA I
I
I
1mA V
Input Capacitance (Gate to Source) V
Reverse Capacitance (Gate to Drain) V
Output Capacitance (Drain to Source) V
Drain to Source Resistance, V
Description
Human Body Model
DS
DS
lead concurrently or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages
=3mA, V
=50mA, V
DS
current
DQ
DS
DS
will vary from device to device due to the normal die-to-die variation in threshold voltage with LDMOS
=28V
Absolute Maximum Ratings
=28V
Drain Voltage (V
Gate Voltage (V
RF Input Power
Load Impedance for Continuous Operation Without Damage
Output Device Channel Temperature
Operating Temperature Range
Storage Temperature Range
Operation of this device beyond any one of these limits may cause permanent damage. For
reliable continuous operation see typical setup values specified in the table on page one.
Phone: (800) SMI-MMIC
GS
GS
=10V V
DS
2
)
)
GS
DS
GS
GS
=0V V
DS
=0V V
=0V V
=250mV
Parameters
DS
DS
DS
=28V
Description
=28V
=28V
mA / V
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
SLD-1026Z 3 Watt LDMOS FET
Volts
Volts
Volts
Unit
pF
pF
pF
Ω
Min
3
-40 to +150
-40 to +85
http://www.sirenza.com
EDS-104157 Rev F
Value
+150
10:1
+30
35
20
Typical
150
4.2
5.2
0.2
3.2
3.0
65
4
Preliminary
Rating
1B
VSWR
Volts
Volts
Unit
dBm
ºC
ºC
ºC
Max
5