2SA0885 Panasonic Semiconductor, 2SA0885 Datasheet - Page 2

• Manufacturer Part Number: 2SA0885
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

2SA0885
2
–0.01
–0.1
200
160
120
–10
–1
80
40
–0.01
6
5
4
3
2
1
0
0
0
1
V
f=200MHz
T
C
CB
Ambient temperature T
=25˚C
=–10V
Collector current I
Emitter current I
40
25˚C
V
(1)With a 100 × 100 × 2 mm
(2)Without heat sink
(2)
(1)
CE(sat)
P
f
Al heat sink
80
–0.1
C
T
T
 I
 T
C
10
=100˚C
 I
120
E
a
E
C
C
–25˚C
(mA)
a
(A)
160
I
(°C)
C
/I
–1
B
=10
200
100
−1.50
−1.25
−1.00
−0.75
−0.50
−0.25
–0.01
–0.1
–10
50
40
30
20
10
–1
–0.01
0
0
–1
0
Collector-emitter voltage V
Collector-base voltage V
Collector current I
−2
SJD00002BED
V
C
–7mA
I
BE(sat)
C
ob
−4
T
–0.1
C
 V
–8mA
=–25˚C
 V
25˚C
–10
100˚C
 I
−6
–9mA
CE
CB
C
C
I
T
(A)
CB
B
I
f=1MHz
T
−8
C
I
E
=–10mA
CE
C
C
=0
=25˚C
/I
=25˚C
–3mA
–2mA
–1mA
–6mA
–5mA
–4mA
–1
(V)
B
=10
(V)
–100
−10
1 000
–100
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
100
–80
–60
–40
–20
10
–0.01
0
1
0
0.1
0
Base-emitter resistance R
V
T
C
CE
=25˚C
=–10V
–2
Collector current I
Base current I
V
T
–4
C
1
h
CER
=100˚C
I
FE
–0.1
C
–25˚C
 I
–6
 I
 R
B
B
C
–8
BE
10
(mA)
25˚C
C
I
T
V
C
(A)
C
BE
=–10mA
CE
=25˚C
–10
=–10V
–1
(kΩ)
–12
100