2SA1111 Inchange Semiconductor, 2SA1111 Datasheet
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Manufacturer Part Number
2SA1111
Description
POWER TRANSISTOR
Manufacturer
Inchange Semiconductor
Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2591/2592
·Good linearity of h
·High V
APPLICATIONS
·For audio frequency, high power
PINNING
Absolute maximum ratings(Ta=25
SYMBOL
amplifiers application
V
V
V
PIN
T
I
P
CBO
CEO
EBO
I
CM
T
1
2
3
C
stg
C
j
CEO
Emitter
Collector;connected to
mounting base
Base
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
FE
PARAMETER
℃)
2SA1111
2SA1112
2SA1111
2SA1112
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-220) and symbol
CONDITIONS
2SA1111 2SA1112
Product Specification
-55~150
VALUE
-150
-180
-150
-180
-1.5
150
20
-5
-1
UNIT
W
℃
℃
V
V
V
A
A
Related parts for 2SA1111
2SA1111 Summary of contents
... Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-220) and symbol ℃) CONDITIONS 2SA1111 Open emitter 2SA1112 2SA1111 Open base 2SA1112 Open collector T =25℃ C Product Specification 2SA1111 2SA1112 VALUE UNIT -150 V -180 -150 V -180 - -1 ℃ 150 ℃ ...
... =-120V =-4V =-150mA ; V =-10V =-500mA ; V =- =-10V;f=1MHz =50mA ; V =-10V 185-330 2 Product Specification 2SA1111 2SA1112 MIN TYP. MAX UNIT -150 V -180 -5 V -0.5 -2.0 V -1.0 -2.0 V μA -1 μ 330 200 MHz ...
... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) Product Specification 2SA1111 2SA1112 3 ...
... Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA1111 2SA1112 4 ...
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