2SA1122 Hitachi Semiconductor, 2SA1122 Datasheet - Page 2

• Manufacturer Part Number: 2SA1122
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1122
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
Grade
Mark
h
See characteristic curves of 2SA836.
2
FE
1. The 2SA1122 is grouped by h
B
CC
160 to 320
C
CD
250 to 500
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
FE
Min
–55
–55
–5
—
—
160
—
—
as follows.
D
CE
400 to 800
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
C
CBO
CEO
EBO
C
Max
—
—
—
–0.5
–0.5
800
–0.5
–0.75
Unit
V
V
V
V
V
A
A
Ratings
–55
–55
–5
–100
150
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
V
C
C
E
C
CB
EB
CE
CE
= –10 A, I
= –10 A, I
= –1 mA, R
= –10 mA, I
= –30 V, I
= –12 V, I
= –2 V, I
= –12 V, I
Unit
V
V
V
mA
mW
C
C
C
C
E
C
E
C
BE
= 0
B
= 0
= 0
= 0
= –2 mA
= –2 mA
= –1 mA
=