2SA1124 Panasonic Semiconductor, 2SA1124 Datasheet
2SA1124
Manufacturer Part Number
2SA1124
Description
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SA1124.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA1124-S
Manufacturer:
PANASONIC
Quantity:
935
Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
FE
Features
Satisfactory foward current transfer ratio h
characteristics.
High collector to emitter voltage V
Small collector output capacitance C
Makes up a complementary pair with 2SC2632, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
130 ~ 220
R
185 ~ 330
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
I
V
V
h
V
f
C
NV
CBO
T
FE
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*
CEO
(Ta=25˚C)
260 ~ 450
ob
–55 ~ +150
.
.
Ratings
T
–150
–150
–100
–50
150
–5
1
FE
V
I
I
V
I
V
V
V
R
collector current I
C
E
C
CB
g
CB
CE
CE
CE
= –0.1mA, I
= –10 A, I
= –30mA, I
= 100k , Function = FLAT
= –10V, I
= –5V, I
= –10V, I
= –10V, I
= –100V, I
Unit
mA
mA
Conditions
C
˚C
˚C
W
V
V
V
C
E
E
C
B
= –10mA
B
= 10mA, f = 200MHz
= 0
E
= 0, f = 1MHz
= –1mA, G
= –3mA
= 0
= 0
C
V
= 80dB
2.54 0.15
0.7 0.1
1.27
–150
min
0.45
130
1
–5
5.9 0.2
+0.2
–0.1
2
3
1.27
200
150
typ
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
0.45
max
450
300
+0.2
–0.1
–1
–1
5
4.9 0.2
Unit: mm
MHz
Unit
mV
pF
V
V
V
A
1
Related parts for 2SA1124
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon MOS FETs
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon P-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Impedance Conversion In Low Frequency
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For Low-Frequency Amplification
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel Junction FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
Silicon N-Channel MOS FET
Manufacturer:
Panasonic Semiconductor
Datasheet:
Part Number:
Description:
For switching
Manufacturer:
Panasonic Semiconductor
Datasheet:
2SA1124 Summary of contents
Page 1
... Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Features Satisfactory foward current transfer ratio h characteristics. High collector to emitter voltage V Small collector output capacitance C Makes up a complementary pair with 2SC2632, which is opti- mum for the pre-driver stage 60W output amplifier. ...
Page 2
... V =–5V CE 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 ( mA ) Collector current I C 2SA1124 I — –120 V =–5V CE 25˚C –100 Ta=75˚C –25˚C –80 –60 –40 – – 0.4 – 0.8 –1.2 –1.6 – ...