2SA1180 Inchange Semiconductor, 2SA1180 Datasheet

2SA1180

Manufacturer Part Number

2SA1180

Description

POWER TRANSISTOR

Manufacturer

Inchange Semiconductor

Datasheet

1.2SA1180.pdf (3 pages)

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BOSTOCK HK LIMITED

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Silicon PNP Power Transistors

DESCRIPTION

·With TO-3 package

·High power dissipations

APPLICATIONS

·For power switching amplifier and

PINNING(see Fig.2)

Absolute maximum ratings(Ta=

Inchange Semiconductor

SYMBOL

general purpose applications

CBO

CEO

EBO

stg

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

CONDITIONS

Fig.1 simplified outline (TO-3) and symbol

Product Specification

-55~150

VALUE

-180

100

150

-10

-6

-4

2SA1180

UNIT

℃

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2SA1180 Summary of contents

Page 1

... B P Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SA1180 VALUE UNIT -180 V -180 - 100 W ℃ 150 ℃ -55~150 ...

Page 2

... EBO h DC current gain FE CONDITIONS I =-25mA ; =-1mA ; =-1mA ; =-5A; I =-0. =-5A; I =-0. =-180V =- Product Specification 2SA1180 MIN TYP. MAX UNIT -180 V -180 -2.0 V -2.5 V -0 ...

Page 3

... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Product Specification 3 2SA1180 ...

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