2SA1350 Hitachi Semiconductor, 2SA1350 Datasheet - Page 2

• Manufacturer Part Number: 2SA1350
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA1350
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Note:
B
100 to 200
See characteristic curves of 2SA1031.
2
1. The 2SA1350 is grouped by h
C
160 to 320
D
250 to 500
Symbol
V
V
V
I
I
h
V
V
f
Cob
NF
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
FE
Min
–40
–30
–5
—
—
100
—
—
—
—
—
as follows.
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
200
—
1.0
C
CBO
CEO
EBO
C
Max
—
—
—
–0.5
–0.5
500
–0.75
–0.2
—
4.5
5.0
Unit
V
V
V
V
V
MHz
pF
dB
A
A
Ratings
–40
–30
–5
–100
300
150
–55 to +150
Test conditions
I
I
I
V
V
V
V
I
V
V
V
R
C
C
E
C
CB
EB
CE
CE
CE
CB
CE
g
= –10 A, I
= –10 A, I
= –1 mA, R
= –10 mA, I
= 1 k , f = 1 kHz
= –2 V, I
= –18 V, I
= –12 V, I
= –12 V, I
= –12 V, I
= –10 V, I
= –6 V, I
C
Unit
V
V
V
mA
mW
C
C
C
C
E
E
= 0
C
C
C
E
BE
= –0.1 mA
B
= 0
= 0
= 0
= 0, f = 1 MHz
= –2 mA
= –2 mA
= –2 mA
= –1 mA
=