2SA836 Hitachi Semiconductor, 2SA836 Datasheet - Page 2

• Manufacturer Part Number: 2SA836
• Description: Silicon PNP Epitaxial
• Manufacturer: Hitachi Semiconductor

2SA836
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Noise figuer
Note:
C
160 to 320
2
1. The 2SA836 is grouped by h
D
250 to 500
Symbol
V
V
V
I
I
h
V
V
f
Cob
NF
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
FE
as follows.
Min
–55
–55
–5
—
—
160
—
—
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
–0.1
–0.66
200
2.0
1
0.5
C
E
CBO
CEO
EBO
C
Max
—
—
—
–100
–50
500
–0.5
–0.75
—
—
5
1
Unit
V
V
V
nA
nA
V
V
MHz
dB
pF
dB
Ratings
–55
–55
–5
–100
100
200
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
V
V
V
V
I
R
C
C
E
C
C
CB
EB
CE
CE
CE
CB
CE
g
= –10 A, I
= –10 A, I
= –1 mA, R
= –10 mA, I
= –0.1mA,
= 10 k
= –2 V, I
= –18 V, I
= –12 V, I
= –12 V, I
= –10 V, I
= –12 V, I
= –6 V,
C
Unit
V
V
V
mA
mA
mW
C
C
C
E
C
E
E
E
= 0
C
BE
B
= 0
= 0
= –2 mA
= 0, f = 1MHz
= 0
= –2 mA
= –2 mA
= –1 mA
=
f = 10 Hz
f = 1 kHz