BFG25AW Philips Semiconductors, BFG25AW Datasheet - Page 2

• Manufacturer Part Number: BFG25AW
• Description: NPN 5 GHz wideband transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Sep 23
V
V
I
P
h
C
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
stg
j
Low current consumption
(100 A to 1 mA)
Low noise figure
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
CBO
CEO
EBO
tot
re
NPN 5 GHz wideband transistors
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
open emitter
open base
T
I
I
I
I
C
C
C
C
s
s
PINNING
BFG25AW
BFG25AW/X
= 0.5 mA; V
= 0; V
= 1 mA; V
= 0.5 mA; V
PIN
85 C
1
2
3
4
1
2
3
4
opt
; I
CE
open emitter
open base
open collector
T
C
s
= 1 V; f = 1 MHz
= 1 mA; V
collector
base
emitter
emitter
collector
emitter
base
emitter
CE
CE
CE
85 C; see Fig.2; note 1
= 1 V; f = 500 MHz; T
CONDITIONS
= 1 V
= 1 V; f = 1 GHz; T
DESCRIPTION
2
CE
CONDITIONS
= 1 V; f = 1 GHz
amb
amb
BFG25AW; BFG25AW/X
= 25 C
= 25 C 3.5
fpage
MARKING
BFG25AW
BFG25AW/X
TYPE NUMBER
50
MIN.
65
MIN.
Fig.1 SOT343N.
4
1
Top view
Product specification
80
0.2
5
16
2
TYP. MAX. UNIT
8
5
2
6.5
500
+150
175
MAX.
8
5
6.5
500
200
0.3
3
2
CODE
MBK523
N6
V1
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
pF
GHz
dB
dB