BFG410 Philips Semiconductors, BFG410 Datasheet

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BFG410

Manufacturer Part Number
BFG410
Description
NPN 22 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
BFG410W
NPN 22 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1998 Mar 11

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BFG410 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 ...

Page 2

... mA GHz mA GHz mA GHz CAUTION 2 Product specification BFG410W DESCRIPTION emitter base emitter collector Top view MSB842 Fig.1 Simplified outline SOT343R. MIN. TYP. MAX. 10 4.5 10 ...

Page 3

... Fig.2 Power derating curve. 1998 Mar 11 CONDITIONS open emitter open base open collector T 110 C; note 1; see Fig.2 s PARAMETER MGD960 120 160 Product specification BFG410W MIN. MAX. UNIT +150 C 150 C VALUE UNIT ...

Page 4

... GHz 0 see Fig.13 opt = GHz; 1 GHz note 2 L opt = GHz note 2 L opt = MSG; see Figs 6, 7 and 8. Product specification BFG410W MAX. UNIT 120 GHz dBm dBm ...

Page 5

... I C (mA 900 MHz. CE Fig.6 5 Product specification Feedback capacitance as a function of collector-base voltage; typical values Maximum stable gain as a function of collector current; typical values. BFG410W MGG718 (V) MGG720 (mA) ...

Page 6

... MGG721 handbook, halfpage gain (dB) G max (mA mA Fig 135 0.5 0.2 0.2 0 GHz 0.2 0.5 135 Product specification BFG410W 50 40 MSG (MHz Gain as a function of frequency; typical values. 1.0 0 0.6 0 ...

Page 7

... mA Fig.11 Common emitter reverse transmission coefficient (S 1998 Mar 11 90 135 3 GHz 40 MHz 135 90 90 135 3 GHz 0.1 0.08 0.06 0.04 0.02 40 MHz 135 90 7 Product specification BFG410W MGG725 ); typical values MGG726 ); typical values. 12 ...

Page 8

... MHz; V 35.8 0.34 Fig.13 Minimum noise figure as a function of the 38.0 0.35 44.8 0.34 8 Product specification 1.0 0 0.6 0.4 5 0.2 40 MHz GHz 2 45 1.0 MGG727 ); typical values min (dB) 2 (1) ( collector current; typical values. BFG410W MGG723 (mA) ...

Page 9

... Philips Semiconductors NPN 22 GHz wideband transistor SPICE parameters for the BFG410W die SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...

Page 10

... VERSION IEC SOT343R 1998 Mar scale 0.25 2.2 1.35 1.15 1.3 0.10 1.8 1.15 REFERENCES JEDEC EIAJ detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification BFG410W SOT343R 0.1 ISSUE DATE 97-05-21 ...

Page 11

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 11 11 Product specification BFG410W ...

Page 12

... Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...

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