BFG92A/X Philips Semiconductors, BFG92A/X Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/5/522/philips_semiconductors_sml.jpg)
BFG92A/X
Manufacturer Part Number
BFG92A/X
Description
NPN 5 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BFG92AX.pdf
(16 pages)
Philips Semiconductors
FEATURES
APPLICATIONS
Wideband applications in the UHF
and microwave range.
QUICK REFERENCE DATA
1998 Sep 23
V
V
I
P
C
f
G
F
SYMBOL
C
T
High power gain
Low noise figure
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
re
NPN 5 GHz wideband transistor
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
PARAMETER
DESCRIPTION
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
PINNING
T
I
I
I
f = 1 GHz
I
f = 2 GHz
T
C
C
C
C
s
s
amb
= i
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
PIN
1
2
3
4
60 C
c
= 25 C; f = 1 GHz
opt
= 0; V
; I
C
collector
emitter
base
emitter
= 5 mA; V
CB
CONDITIONS
CE
CE
CE
= 10 V; f = 1 MHz
DESCRIPTION
= 10 V; f = 500 MHz
= 10 V; T
= 10 V; T
2
CE
= 10 V;
amb
amb
= 25 C;
= 25 C;
handbook, 2 columns
3.5
Marking code: V14.
MIN.
Top view
1
4
Fig.1 SOT143B.
0.35
5
16
11
2
TYP.
Product specification
BFG92A/X
20
15
25
400
MAX.
MSB014
3
2
V
V
mA
mW
pF
GHz
dB
dB
dB
UNIT