BFQ252 Philips Semiconductors, BFQ252 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/5/522/philips_semiconductors_sml.jpg)
BFQ252
Manufacturer Part Number
BFQ252
Description
PNP video transistors
Manufacturer
Philips Semiconductors
Datasheet
1.BFQ252.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFQ252
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
CHARACTERISTICS
T
1997 Oct 02
handbook, halfpage
V
V
V
V
I
I
h
C
f
SYMBOL
j
CES
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
= 25 C unless otherwise specified.
cb
PNP video transistors
(mA)
I C
400
300
200
100
0
0
collector-base breakdown voltage
collector-emitter breakdown voltage I
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector-base capacitance
transition frequency
BFQ252
BFQ252A
BFQ252
BFQ252A
BFQ252
BFQ252A
BFQ252
BFQ252A
20
Fig.2 DC SOAR.
PARAMETER
40
60
V CEO (V)
MBB893
80
I
I
I
I
I
T
I
T
I
f = 100 MHz; T
C
C
C
E
B
E
C
C
C
amb
amb
= 0.1 mA; I
= 10 mA; I
= 10 mA; R
= 0.1 mA; I
= 0; V
= 0; V
= 50 mA; V
= i
= 50 mA; V
c
= 25 C; see Fig.4
= 25 C; see Fig.5
= 0; V
CE
CB
4
= 50 V
= 50 V
handbook, halfpage
CONDITIONS
CB
B
C
E
amb
CE
CE
BE
= 10 V; f = 1 MHz;
= 0
= 0
= 0
P tot
(W)
= 100
= 10 V;
= 10 V;
= 25 C; see Fig.6
4
3
2
1
0
0
Fig.3 Power derating curve.
50
BFQ252; BFQ252A
100
20
1
0.8
MIN.
100
115
65
95
95
110
3
30
2.5
1.3
1.2
TYP.
Product specification
150
T s (
MBB895
MAX. UNIT
o
C)
100
20
200
V
V
V
V
V
V
V
pF
GHz
GHz
A
A